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| ASAT15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT15 is Designed for PACKAGE STYLE .250 2L FLG(A) .020 x 45 A O .130 NOM. .050 x 45 FEATURES: * * * OmnigoldTM Metalization System DC L B M F E G H J I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC O K 3.0 A 45 V 15 V 3.0 V 37.2 W -65 OC to +200 OC -65 C to +150 C 4.7 OC/W O DIM A B C D E F G H I J K L M MINIMUM inches / mm MAXIMUM inches / mm .055 / 1.40 .124 / 3.15 .243 / 6.17 .635 / 16.13 .555 / 14.10 .739 / 18.77 .315 / 8.00 .002 / 0.05 .055 / 1.40 .075 / 1.91 .245 / 6.22 .092 / 2.34 .065 / 1.65 .253 / 6.43 .665 / 16.89 .565 / 14.35 .749 / 19.02 .325 / 8.26 .006 / 0.15 .065 / 1.65 .095 / 2.41 .190 / 4.83 .255 / 6.48 O ORDER CODE: ASI10518 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO hFE COB PG C TC = 25 C NONETEST CONDITIONS IC = 5.0 mA IC = 5.0 mA IE = 5.0 mA VCE = 5.0 V VCB = 28 V VCE = 28 V POUT = 15 W IC = 1.0 A f = 1.0 MHz f = 1.65 GHz MINIMUM TYPICAL MAXIMUM 45 12 3.0 15 150 12 9.2 45 UNITS V V V --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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